ntgs3441p power mosfet ?20 v, ?3.16 a, single p?channel tsop?6 features ? ultra low r ds(on) to improve conduction loss ? low gate charge to improve switching losses ? tsop?6 surface mount package ? this is a pb?free device applications ? high side switch in dc?dc converters ? battery management maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain?to?source voltage v dss ?20 v gate?to?source voltage v gs 12 v continuous drain current (note 1) steady state t a = 25 c i d ?2.5 a t a = 85 c ?1.8 t = 10 s t a = 25 c ?3.16 power dissipation (note 1) steady state t a = 25 c p d 0.98 w t = 10 s 1.60 continuous drain current (note 2) steady state t a = 25 c i d ?1.8 a t a = 85 c ?1.3 power dissipation (note 2) t a = 25 c p d 0.51 w pulsed drain current t p = 10 s i dm ?13 a operating junction and storage temperature t j , t stg ?55 to 150 c source current (body diode) i s ?1.5 a lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. surface?mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces) 2. surface?mounted on fr4 board using the minimum recommended pad size (cu area = 0.0751 in sq) 3 4 1256 device package shipping ? ordering information p?channel tsop?6 case 318g style 1 marking diagram s3 m pt = device code m = date code = pb?free package (note: microdot may be in either location) pin assignment 3 2 1 4 gate drain source 5 6 drain drain drain NTGS3441PT1G tsop?6 (pb?free) 3000 / tape & ree l ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. 1 1 v (br)dss r ds(on) typ i d max ?20 v 91 m @ 4.5 v ?3.16 a 144 m @ 2.7 v 188 m @ 2.5 v smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 2
thermal resistance maximum ratings parameter symbol value unit junction?to?ambient ? steady state (note 3) r ja 128 c/w junction?to?ambient ? t = 10 s (note 3) r ja 78 junction?to?ambient ? steady state (note 4) r ja 244 3. surface?mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces) 4. surface?mounted on fr4 board using the minimum recommended pad size (cu area = tbd in sq) electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = ?250 a ?20 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j 16 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = ?20 v t j = 25 c ?1 a t j = 125 c ?10 gate?to?source leakage current i gss v ds = 0 v, v gs = 12 v 100 na on characteristics (note 5) gate threshold voltage v gs(th) v gs = v ds , i d = ?250 a 0.6 1.6 v negative threshold temperature coefficient v gs(th) /t j 3.2 mv/ c drain?to?source on resistance r ds(on) v gs = 4.5 v, i d = ?3.0 a 91 110 m v gs = 2.7 v, i d = ?1.5 a 144 165 v gs = 2.5 v, i d = ?1.5 a 188 forward transconductance g fs v ds = ?15 v, i d =?1.5 a 4.0 s charges, capacitances and gate resistance input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = ?15 v 345 pf output capacitance c oss 150 reverse transfer capacitance c rss 40 total gate charge q g(tot) v gs = 4.5 v, v ds = ?10 v; i d = ?3.0 a 3.25 6.0 nc threshold gate charge q g(th) 0.3 gate?to?source charge q gs 0.6 gate?to?drain charge q gd 1.4 switching characteristics (note 6) turn?on delay time t d(on) v gs = 4.5 v, v dd = ?10 v, i d = ?1.5 a, r g = 4.7 7.0 12 ns rise time t r 14 25 turn?off delay time t d(off) 13 25 fall time t f 4.0 8.0 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = ?3.0 a t j = 25 c 0.8 1.2 v t j = 125 c 0.7 reverse recovery time t rr v gs = 0 v, d is /d t = 100 a/ s, i s = ?3.0 a 25 ns charge time t a 10 discharge time t b 15 reverse recovery charge q rr 15 nc 5. switching characteristics are independent of operating junction temperatures 6. pulse test: pulse width = 300 s, duty cycle = 2% ntgs3441p smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 2
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